IPL65R130C7AUMA1 vs ISC011N04NM7VATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL65R130C7AUMA1 sa pamamagitan ng Infineon at ISC011N04NM7VATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL65R130C7AUMA1 - 650V 15A 130mΩ CoolMOS C7 N-MOSFET | Infineon
IPL65R130C7AUMA1 ✓ NakahandaInfineon
ISC011N04NM7VATMA1 - 40V 1.1mΩ OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPL65R130C7AUMA1 | ISC011N04NM7VATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | Trench MOSFET, silicon |
| Drain-Source Voltage (V DS) | 650 V | — |
| Continuous Drain Current (I D, Tc=25°C) | 15 A | — |
| On-Resistance R DS(on) max | 130 mΩ | — |
| Power Dissipation (P D) | 102 W | — |
| Packhaging | PG-VSON-4 | PG-TDSON-8 (source-down) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -40°C to +150°C (Tj) | -55 °C to +175 °C (TJ) |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge (Q G) | [DATA_NEEDED: total gate charge] | — |
| Rise Time (t r) | [DATA_NEEDED: rise time] | — |
| Fall Time (t f) | [DATA_NEEDED: fall time] | — |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | MSL 1 | MSL 1 (per JEDEC J-STD-020) |
| Product Family | — | OptiMOS 7 Power-Transistor |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TA=25°C | — | 38 A |
| Continuous Drain Current (ID) at TC | — | 256 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.1 mΩ |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 136 W |
| Gate Threshold Voltage (Vth) | — | Up to 3.2 V |
| Short-Circuit Withstand | — | Yes (current-limited) |
| RoHS Compliance | — | Compliant (per Infineon product page) |