IPN70R2K0P7SATMA1 vs IPD60R1K0PFD7SAUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPN70R2K0P7SATMA1 sa pamamagitan ng Infineon at IPD60R1K0PFD7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK
IPD60R1K0PFD7SAUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPN70R2K0P7SATMA1 | IPD60R1K0PFD7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS PFD7 Superjunction (SJ) MOSFET |
| Polarity / Channel Type | N-Channel Enhancement Mode | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | 700 V | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | 3 A | — |
| Power Dissipation (PD, Tc=25°C) | 6 W | — |
| On-Resistance (RDS(on)) | 2.0 Ω (max, VGS=10 V) | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V (typical) | ±20 V (max gate-source) |
| Gate-Source Voltage (VGS max) | ±20 V | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | -55C to +150C (TJ) |
| Packhaging | PG-SOT223 (3 leads + tab) | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Integrated ESD Diode | Yes | — |
| Tindminan RoHS | Compliant (ROHS3) | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Continuous Drain Current (ID) at TC | — | 4.7 A |
| Power Dissipation (PD) at TC | — | 26 W |
| Drain-Source On-Resistance (RDS(on)) | — | 1 Ω @ VGS=10V |
| Gate Charge (QG) | — | 6 nC @ VGS=10V |
| Output Capacitance (Coss) | — | 230 pF @ 400 V |
| Gate Drive Voltage (recommended) | — | 10 V (full enhancement) |
| Series | — | CoolMOS PFD7 consumer / superjunction |