IPP075N15N3GXKSA1 vs IPP045N10N3GXKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP075N15N3GXKSA1 sa pamamagitan ng Infineon at IPP045N10N3GXKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon
IPP075N15N3GXKSA1 ✓ NakahandaInfineon
IPP045N10N3GXKSA1 - 100V 4.5mΩ OptiMOS 3 Power MOSFET | Infineon
IPP045N10N3GXKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP075N15N3GXKSA1 | IPP045N10N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel MOSFET (OptiMOS 3) | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Power Dissipation (PD, Tc=25C) | 300 W | — |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | — |
| Packhaging | PG-TO220-3 (TO-220 through-hole) | TO-220-3 (PG-TO220-3) through-hole |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: junction operating temperature range] | -55 °C to +175 °C (junction, typical MOSFET limit) |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | RoHS Compliant | — |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | — |
| Part Number | — | IPP045N10N3GXKSA1 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C | — | 100 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>D,pulse</sub>) | — | 137 A |
| On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V | — | 4.5 mΩ |
| Gate Threshold Voltage V<sub>GS(th)</sub> | — | 3.5 V (typical, per LCSC listing) |
| Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C | — | 214 W |
| Tindminan RoHS | — | Compliant (per LCSC datasheet excerpt) |
| Lead-Free | — | Yes (Infineon G/GX part suffix) |
| Level ng MSL | — | N/A (through-hole package) |