IPP320N20N3GXKSA1 vs IPP147N12N3GXKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP320N20N3GXKSA1 sa pamamagitan ng Infineon at IPP147N12N3GXKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
IPP320N20N3GXKSA1 ✓ NakahandaInfineon
IPP147N12N3GXKSA1 - 120V 56A OptiMOS N-Channel MOSFET | Infineon
IPP147N12N3GXKSA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP320N20N3GXKSA1 | IPP147N12N3GXKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 3 trench MOSFET |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25°C | 34 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 32 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Power Dissipation PD at TC=25°C | 136 W | — |
| Packhaging | TO-220-3 (PG-TO220-3) through-hole | PG-TO220-3 (through-hole) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Bilang ng Pins | 3 (3 + Tab) | 3 (3+Tab) |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | [DATA_NEEDED: Tj max and operating range] |
| Channel Type | N-Channel | — |
| Element Configuration | Single | — |
| Tindminan RoHS | Compliant | Compliant (per distributor listing suffixes XKSA1) |
| Lead-Free | Yes | Yes |
| Level ng MSL | Not applicable (through-hole) | — |
| Series | — | OptiMOS |
| Uri ng Transistor | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-to-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) at Tc=25C | — | 56 A |
| Continuous Drain Current (Id) at Ta | — | 56 A (Ta, per DigiKey listing) |
| Power Dissipation (Pd) at Tc=25C | — | 107 W |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg value] |
| Rds(on) max | — | [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] |
| Vgs(th) (Gate Threshold) | — | [DATA_NEEDED: typical gate threshold voltage] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: typical Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: typical Coss] |
| Reverse Recovery (trr) | — | [DATA_NEEDED: body-diode reverse recovery time] |
| Avalanche Energy Rating | — | Single-pulse avalanche rated |
| Qualification | — | Automotive grade (per datasheet.live listing 'Automotive') |
| Packing Method | — | Tube |