IPT007N06NATMA1 vs BSZ060NE2LSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPT007N06NATMA1 sa pamamagitan ng Infineon at BSZ060NE2LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPT007N06NATMA1 IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 ✓ Nakahanda
Infineon
BSZ060NE2LSATMA1 BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon

BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon

BSZ060NE2LSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPT007N06NATMA1 BSZ060NE2LSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS™ (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 60 V 25 V
Continuous Drain Current (ID, TC=25C) 300 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 44 A
On-Resistance (RDS(on), VGS=10V max) 0.75 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Power Dissipation (PD, TC=25C) 375 W —
Hanay ng Temperature na Operasyon -55 C to +175 C (TJ) -55C to +150C
Packhaging PG-HSOF-8-1 (TOLL) PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Configuration Single N-channel —
Gate Charge (QG) [DATA_NEEDED: total gate charge] —
Avalanche Energy (EAS) [DATA_NEEDED: single-pulse avalanche energy] —
Thermal Resistance (RthJC max) [DATA_NEEDED: RthJC] —
Level ng MSL MSL 1 (per JEDEC J-STD-020) 1
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Wala sa Halogen Yes —
Standard Pack Quantity 3000 (Tape & Reel) —
Manufacturer — Infineon Technologies
Part Number — BSZ060NE2LSATMA1
Continuous Drain Current (ID) @ Ta=25C — 12 A
Continuous Drain Current (ID) @ Tc=25C — 44 A
On-Resistance RDS(on) max @ VGS=10V — 6 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) @ VGS=4.5V]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) typ — [DATA_NEEDED: VGS(th) typical]
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 26 W
Shipping Packaging — Tape & Reel

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