IQDH88N06LM5SCATMA1 vs IQDH88N06LM5CGSCATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQDH88N06LM5SCATMA1 sa pamamagitan ng Infineon at IQDH88N06LM5CGSCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 ✓ NakahandaInfineon
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon
IQDH88N06LM5CGSCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQDH88N06LM5SCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IQDH88N06LM5SCATMA1 | — |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET (OptiMOS 5) | OptiMOS 5 (trench) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Ta) | 42 A | — |
| Continuous Drain Current (ID, Tc) | 447 A | — |
| On-State Resistance (RDS(on)) | 0.7 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V | — |
| Total Gate Charge (Qg) | 76 nC | — |
| Input Capacitance (Ciss) | 11 nF | — |
| Output Capacitance (Coss) | 2 nF | — |
| Reverse Transfer Capacitance (Crss) | 95 pF | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55°C to +175°C (TJ) |
| Packhaging | PG-WHSON-8-U02 (source-down, dual-side cooling) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Patuloy na Drain Current (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Pwersang Pinahihigpit (TC=25°C) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Bilang ng Pin | — | 9 (with exposed pad) |
| Cooling | — | Dual-side cooling capable |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Polarity | — | N-Channel |
| Configuration | — | Single |