IQE004NE1LM7CGATMA1 vs IQE020N04LM6CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE004NE1LM7CGATMA1 sa pamamagitan ng Infineon at IQE020N04LM6CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon
IQE004NE1LM7CGATMA1 ✓ NakahandaInfineon
IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE004NE1LM7CGATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 6 |
| Technology | N-Channel Trench Power MOSFET | OptiMOS 6, TrenchFET-class |
| Drain-Source Voltage (VDS) | 15 V | 40 V |
| Continuous Drain Current (ID, TA=25C) | 58 A | — |
| Continuous Drain Current (ID, TC=25C) | 379 A | — |
| Power Dissipation (TA=25C) | 2.1 W | — |
| Power Dissipation (TC=25C) | 89 W | — |
| On-Resistance RDS(on) max | 0.45 mOhm at VGS=10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Packhaging | PG-TTFN-9-3 (surface mount) | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55C to +150C (junction) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | MSL1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (CGATMA1 suffix) | — |
| Polarization | N-Channel | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |
| Hanay ng Temperature na Operasyon | — | -55°C to +150°C |
| Configuration | — | Single N-Channel, source-down |