IQE013N04LM6ATMA1 vs IQE012N03LM5CGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQE013N04LM6ATMA1 sa pamamagitan ng Infineon at IQE012N03LM5CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQE012N03LM5CGATMA1 IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon

IQE012N03LM5CGATMA1 - 30V 224A OptiMOS 5 N-FET | Infineon

IQE012N03LM5CGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQE013N04LM6ATMA1 IQE012N03LM5CGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS N-channel trench MOSFET —
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V 30 V
Gate-Source Voltage (VGS) ±20 V —
Continuous Drain Current (Ta) 31 A —
Continuous Drain Current (Tc) 205 A —
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 107 W 107 W
On-Resistance RDS(on) max [DATA_NEEDED: RDS(on) max value at VGS=10V] —
On-Resistance RDS(on) typ 1.35 mΩ @ VGS=10 V, ID=20 A —
Gate Threshold Voltage (VGS(th)) 2 V (typ) —
Packhaging PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate)
Hanay ng Temperature na Operasyon -55 °C to +175 °C —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Source-Down Topology Yes (flip-chip die attach, drain on top thermal pad) —
FET Type — N-Channel
Continuous Drain Current (ID, Ta) — 34 A
Pulsed Drain Current (IDM, Tc) — 224 A
On-Resistance RDS(on), typ — 1.20 mOhm
Gate-Source Threshold VGS(th) — 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level)
Technology / Process — OptiMOS 5 trench
Temperature na Operasyon — -55 C to +150 C (TJ)
Gate Drive (recommended) — 10 V (logic-level compatible)
Level ng MSL — 1

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