IQE013N04LM6ATMA1 vs IQE012N03LM5CGATMA1 比較
詳細並排比較 IQE013N04LM6ATMA1 由 Infineon 與 IQE012N03LM5CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ 啟用中規格比較
| 參數 | IQE013N04LM6ATMA1 | IQE012N03LM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS N-channel trench MOSFET | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 205 A | — |
| Power Dissipation (Ta) | 2.5 W | 2.5 W |
| Power Dissipation (Tc) | 107 W | 107 W |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | — |
| On-Resistance RDS(on) typ | 1.35 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | — |
| 封裝 | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Ta) | — | 34 A |
| Pulsed Drain Current (IDM, Tc) | — | 224 A |
| On-Resistance RDS(on), typ | — | 1.20 mOhm |
| Gate-Source Threshold VGS(th) | — | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) |
| Technology / Process | — | OptiMOS 5 trench |
| 工作溫度 | — | -55 C to +150 C (TJ) |
| Gate Drive (recommended) | — | 10 V (logic-level compatible) |
| MSL 等級 | — | 1 |