IQE018N06NM6SCATMA1 vs ISZ072N06NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE018N06NM6SCATMA1 sa pamamagitan ng Infineon at ISZ072N06NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE018N06NM6SCATMA1 - 60V 1.8mΩ OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6SCATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE018N06NM6SCATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 60 V | — |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC | 178 A | — |
| On-Resistance RDS(on) Max | 1.8 mΩ at VGS=10 V | — |
| Gate Threshold Voltage VGS(th) Typ | 3.3 V | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 125 W | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging | PG-WHSON-8-1 (5x6 mm) | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (TJ) | -55C to +175C ( Tj max 175C ) |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 6 60V |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 57 A |
| Continuous Drain Current (ID, Ta) | — | 12.7 A |
| RDS(on) max @ VGS=10V | — | 7.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V (typ) |
| Pwersang Pinahihigpit (TC=25°C) | — | 50 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Technology | — | OptiMOS 6 trench MOSFET |
| Level ng MSL | — | 1 |