IQE036N08NM6CGSCATMA1 vs IQE020N04LM6CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE036N08NM6CGSCATMA1 sa pamamagitan ng Infineon at IQE020N04LM6CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ NakahandaInfineon
IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE036N08NM6CGSCATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | OptiMOS 6 |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 40 V |
| Continuous Drain Current (ID) at TA | 16.7 A | — |
| Continuous Drain Current (ID) at TC | 118 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 125 W | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging / Kaso | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | — |
| Technology | Trench MOSFET (OptiMOS 6) | OptiMOS 6, TrenchFET-class |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | Single N-Channel, source-down |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction, per datasheet derating curves) | -55°C to +150°C |
| Packing | Tape and Reel (suffix ATMA1) | — |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | — |
| Tindminan RoHS | Compliant | Compliant |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |
| Packhaging | — | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Level ng MSL | — | MSL1 (per JEDEC J-STD-020) |