IR2153PBF vs IR2109SPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2153PBF sa pamamagitan ng Infineon at IR2109SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IR2153PBF IR2153PBF - 600V Half-Bridge Gate Driver | Infineon

IR2153PBF - 600V Half-Bridge Gate Driver | Infineon

IR2153PBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IR2153PBF IR2109SPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Half-Bridge Gate Driver IC —
Topolohiya Self-oscillating half-bridge with integrated RC oscillator —
Number of Drivers 2 (high-side and low-side) 2 (high-side + low-side)
High-Side Voltage Rating 600 V —
VCC Supply Voltage 10 V to 15.6 V (zener clamped) —
VCC Zener Clamp 15.6 V —
Quiescent Current (Micropower Startup) 500 uA —
Rise Time (typ.) 45 ns —
Fall Time (typ.) 80 ns —
Undervoltage Lockout Increased threshold (per datasheet) Yes (VCC)
Shutdown Feature Yes (1/6 VCC on CT pin) —
Deadtime Control Internal, tighter initial tolerance, low temperature coefficient —
Temperature na Operasyon -40C to +125C —
Packhaging 8-PDIP (0.300 inch, 7.62 mm) SOIC-8
Uri ng Pagpapasok Through-Hole Surface Mount
Tindminan RoHS Pb-Free, RoHS compliant Compliant
Driver Configuration — Half-Bridge
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
Oras ng Pagtaas — 200 ns
Time ng Pagbaba — 50 ns
Quiescent VCC Current — 1 mA
Input Logic Compatibility — 3.3 V / 5 V CMOS / TTL
Bootstrap Diode — Integrated
Temperature ng Junction na Operasyon — -40 C to +150 C

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