IR2153PBF vs IR2109SPBF 比較

詳細並排比較 IR2153PBF 由 Infineon 與 IR2109SPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IR2153PBF IR2153PBF - 600V Half-Bridge Gate Driver | Infineon

IR2153PBF - 600V Half-Bridge Gate Driver | Infineon

IR2153PBF ✓ 啟用中

規格比較

參數 IR2153PBF IR2109SPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
拓撲 Self-oscillating half-bridge with integrated RC oscillator —
Number of Drivers 2 (high-side and low-side) 2 (high-side + low-side)
High-Side Voltage Rating 600 V —
VCC Supply Voltage 10 V to 15.6 V (zener clamped) —
VCC Zener Clamp 15.6 V —
Quiescent Current (Micropower Startup) 500 uA —
Rise Time (typ.) 45 ns —
Fall Time (typ.) 80 ns —
Undervoltage Lockout Increased threshold (per datasheet) Yes (VCC)
Shutdown Feature Yes (1/6 VCC on CT pin) —
Deadtime Control Internal, tighter initial tolerance, low temperature coefficient —
工作溫度 -40C to +125C —
封裝 8-PDIP (0.300 inch, 7.62 mm) SOIC-8
安裝類型 Through-Hole Surface Mount
RoHS 狀態 Pb-Free, RoHS compliant Compliant
Driver Configuration — Half-Bridge
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
上升時間 — 200 ns
下降時間 — 50 ns
Quiescent VCC Current — 1 mA
Input Logic Compatibility — 3.3 V / 5 V CMOS / TTL
Bootstrap Diode — Integrated
工作接面溫度 — -40 C to +150 C

資料表與資源

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