IRF1010NPBF-VB vs IRF1010NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF1010NPBF-VB sa pamamagitan ng VBsemi Elec at IRF1010NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF1010NPBF-VB | IRF1010NPBF |
|---|---|---|
| Brand | VBsemi Elec | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $1.32 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage VDSS | 55 V | — |
| Continuous Drain Current ID | 85 A (Tc) | — |
| Power Dissipation PD | 180 W (Tc) | — |
| On-Resistance RDS(on) | 0.014 Ohm (14 mOhm) | — |
| Total Gate Charge Qg | 80 nC | — |
| Gate-Source Voltage VGSS | +/-20 V | — |
| Operating Mode | Enhancement | — |
| Number of Channels | 1 | — |
| Packhaging | TO-220AB (Through Hole) | TO-220AB |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Configuration | Single FET | Single FET, 1 element |
| Process Technology | Planar HEXFET, Advanced Process Technology | — |
| Recommended Switching Frequency | Below 100 kHz | Below 100 kHz |
| Market Qualification | Industrial | Industrial (JEDEC per manufacturer) |
| Tindminan RoHS | Compliant (Pb-free suffix) | Compliant (PbF = lead-free) |
| FET Type | — | N-Channel MOSFET |
| Technology | — | HEXFET planar |
| Drain-to-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc | — | 85 A |
| Drain-Source On-Resistance (Rds(on)) | — | 11 mOhm max at 10 V gate drive |
| Total Gate Charge (Qg) | — | 80 nC |
| Power Dissipation (Pd) | — | 180 W (Tc) |
| Polarity | — | N-Channel |
| Series | — | HEXFET |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Continuous Drain Current (Id) at Ta | — | [DATA_NEEDED: Id at 25C ambient] |