IRF1010NPBF-VB vs IRF1010NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF1010NPBF-VB tarafından VBsemi Elec ve IRF1010NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF1010NPBF-VB | IRF1010NPBF |
|---|---|---|
| Marka | VBsemi Elec | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Birim Fiyat (USD) | — | $1,32 |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage VDSS | 55 V | — |
| Continuous Drain Current ID | 85 A (Tc) | — |
| Power Dissipation PD | 180 W (Tc) | — |
| On-Resistance RDS(on) | 0.014 Ohm (14 mOhm) | — |
| Total Gate Charge Qg | 80 nC | — |
| Gate-Source Voltage VGSS | +/-20 V | — |
| Operating Mode | Enhancement | — |
| Number of Channels | 1 | — |
| Paket | TO-220AB (Through Hole) | TO-220AB |
| Montaj Türü | Through Hole | Through Hole |
| Configuration | Single FET | Single FET, 1 element |
| Process Technology | Planar HEXFET, Advanced Process Technology | — |
| Recommended Switching Frequency | Below 100 kHz | Below 100 kHz |
| Market Qualification | Industrial | Industrial (JEDEC per manufacturer) |
| RoHS Durumu | Compliant (Pb-free suffix) | Compliant (PbF = lead-free) |
| FET Type | — | N-Channel MOSFET |
| Technology | — | HEXFET planar |
| Drain-to-Source Voltage (Vdss) | — | 55 V |
| Continuous Drain Current (Id) at Tc | — | 85 A |
| Drain-Source On-Resistance (Rds(on)) | — | 11 mOhm max at 10 V gate drive |
| Total Gate Charge (Qg) | — | 80 nC |
| Power Dissipation (Pd) | — | 180 W (Tc) |
| Polarity | — | N-Channel |
| Series | — | HEXFET |
| İşletim Sıcaklığı | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Continuous Drain Current (Id) at Ta | — | [DATA_NEEDED: Id at 25C ambient] |