IRF1010NPBF vs IRF1010NPBF-VB Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF1010NPBF sa pamamagitan ng Infineon at IRF1010NPBF-VB sa pamamagitan ng VBsemi Elec. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF1010NPBF IRF1010NPBF - 55V 85A N-Channel Power MOSFET | Infineon

IRF1010NPBF - 55V 85A N-Channel Power MOSFET | Infineon

IRF1010NPBF ✓ Nakahanda
VBsemi Elec
IRF1010NPBF-VB IRF1010NPBF-VB - 55V 85A N-Channel Power MOSFET | VBsemi

IRF1010NPBF-VB - 55V 85A N-Channel Power MOSFET | VBsemi

IRF1010NPBF-VB ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF1010NPBF IRF1010NPBF-VB
Brand Infineon VBsemi Elec
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) $1.32 —
FET Type N-Channel MOSFET —
Technology HEXFET planar —
Drain-to-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) at Tc 85 A —
Drain-Source On-Resistance (Rds(on)) 11 mOhm max at 10 V gate drive —
Total Gate Charge (Qg) 80 nC —
Power Dissipation (Pd) 180 W (Tc) —
Packhaging TO-220AB TO-220AB (Through Hole)
Uri ng Pagpapasok Through Hole Through Hole
Configuration Single FET, 1 element Single FET
Polarity N-Channel —
Series HEXFET —
Recommended Switching Frequency Below 100 kHz Below 100 kHz
Market Qualification Industrial (JEDEC per manufacturer) Industrial
Tindminan RoHS Compliant (PbF = lead-free) Compliant (Pb-free suffix)
Temperature na Operasyon [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: gate threshold voltage] —
Continuous Drain Current (Id) at Ta [DATA_NEEDED: Id at 25C ambient] —
Transistor Polarity — N-Channel
Drain-Source Voltage VDSS — 55 V
Continuous Drain Current ID — 85 A (Tc)
Power Dissipation PD — 180 W (Tc)
On-Resistance RDS(on) — 0.014 Ohm (14 mOhm)
Total Gate Charge Qg — 80 nC
Gate-Source Voltage VGSS — +/-20 V
Operating Mode — Enhancement
Number of Channels — 1
Process Technology — Planar HEXFET, Advanced Process Technology

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