IRF3007STRLPBF vs IRFH5015TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF3007STRLPBF sa pamamagitan ng Infineon at IRFH5015TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF3007STRLPBF IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon

IRF3007STRLPBF - 75V N-Channel MOSFET, 62A, D2PAK | Infineon

IRF3007STRLPBF ✓ Nakahanda
Infineon
IRFH5015TRPBF IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon

IRFH5015TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF3007STRLPBF IRFH5015TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-to-Source Breakdown Voltage (V(BR)DSS) 75 V —
Continuous Drain Current (Id) at Tc=25°C 62 A —
Pulsed Drain Current (Idm) 250 A —
Static Drain-to-Source On-Resistance (RDS(on)) 12.6 mΩ typical at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 110 nC typical 33 nC
Maximum Power Dissipation (Pd) 120 W at Tc=25°C —
Temperature ng Junction na Operasyon -55°C to +175°C —
Thermal Resistance Junction-to-Case (RθJC) 1.0 °C/W —
Thermal Resistance Junction-to-Ambient (RθJA) 40 °C/W —
Package Type D2PAK (TO-263), 3-pin (2+Tab), Surface Mount —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant (Lead-Free, PBF suffix) Compliant
Avalanche Rated Yes (Repetitive Avalanche Allowed up to Tjmax) —
FET Type — N-Channel
Technology — IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TA=25C — 10 A
Continuous Drain Current (ID) at TC=25C — 56 A
On-Resistance (RDS(on)) max — 31 mOhm
Power Dissipation (TA=25C) — 3.6 W
Power Dissipation (TC=25C) — 156 W
Gate Drive Voltage (VGS recommended) — 10 V
Packhaging — 8-PQFN (5x6) SuperSO8
Configuration — Single with built-in body diode
Temperature na Operasyon — -55C to +150C (TJ max)

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