IRF3710STRLPBF vs IRFB4310PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF3710STRLPBF sa pamamagitan ng Infineon at IRFB4310PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF3710STRLPBF | IRFB4310PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | HEXFET / IR MOSFET (planar) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25 C) | 57 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max | 23 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Total Gate Charge (Qg) | 86.7 nC | 170 nC |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc=25 C) | 200 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55C to +175C (junction) |
| Packhaging | D2PAK (TO-263), surface mount | TO-220AB (through-hole) |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Tindminan RoHS | Compliant (Pb-free) | Compliant |
| Lead-Free | Yes | Yes (Pb-free PBF suffix) |
| Tape & Reel Orientation | TRL (left) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 130 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Maximum Power Dissition (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 7 mOhm |
| On-Resistance RDS(on) typical at VGS=10V | — | 5.6 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Rated | — | Yes |