IRF3710STRLPBF vs IRFB4310PBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF3710STRLPBF tarafından Infineon ve IRFB4310PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF3710STRLPBF | IRFB4310PBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET / IR MOSFET (planar) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID, Tc=25 C) | 57 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max | 23 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Total Gate Charge (Qg) | 86.7 nC | 170 nC |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation (PD, Tc=25 C) | 200 W | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C | -55C to +175C (junction) |
| Paket | D2PAK (TO-263), surface mount | TO-220AB (through-hole) |
| Montaj Türü | Surface Mount | Through Hole |
| RoHS Durumu | Compliant (Pb-free) | Compliant |
| Lead-Free | Yes | Yes (Pb-free PBF suffix) |
| Tape & Reel Orientation | TRL (left) | — |
| Transistor Türü | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 130 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Maximum Power Dissition (PD) at Tc=25C | — | 300 W |
| On-Resistance RDS(on) max at VGS=10V | — | 7 mOhm |
| On-Resistance RDS(on) typical at VGS=10V | — | 5.6 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Avalanche Rated | — | Yes |