IRF4905SPBF vs IRF4905PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905SPBF sa pamamagitan ng Infineon at IRF4905PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF4905SPBF IRF4905PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (VDS) -55 V -55 V
Continuous Drain Current (ID, Tc=25C) -42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on) max) 20 mOhm @ VGS = -10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max, typical +/-20V] [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) -2.0 V to -4.0 V [DATA_NEEDED: VGS(th) typ/range]
Power Dissipation (PD, Tc=25C) 170 W —
Temperature ng Junction na Operasyon -55 C to +150 C —
Thermal Resistance, Junction-to-Case (RthJC) [DATA_NEEDED: RthJC, typical 0.6 C/W] —
Packhaging D2PAK (TO-263) surface mount TO-220AB (through-hole)
Uri ng Pagpapasok Surface Mount Through Hole
Technology HEXFET, planar cell HEXFET (IR MOSFET)
Total Gate Charge (Qg) 120 nC (typical per Mouser listing) 120 nC
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Tindminan RoHS Compliant (PBF suffix indicates Pb-free) —
Qualification JEDEC standard —
FET Type — P-Channel
Continuous Drain Current (ID) at TC — -74 A
Power Dissipation (PD) at TC — 200 W
On-Resistance RDS(on) max at VGS=-10V — 20 mΩ
Hanay ng Temperature na Operasyon — -55 °C to +175 °C (junction)
Pin Configuration — Gate - Drain - Source (left to right)
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Level ng MSL — 1 (not moisture-sensitive for TO-220)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita