IRF4905SPBF vs IRF4905PBF 比較
詳細並排比較 IRF4905SPBF 由 Infineon 與 IRF4905PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF4905SPBF | IRF4905PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID, Tc=25C) | -42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max) | 20 mOhm @ VGS = -10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max, typical +/-20V] | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | [DATA_NEEDED: VGS(th) typ/range] |
| Power Dissipation (PD, Tc=25C) | 170 W | — |
| 工作接面溫度 | -55 C to +150 C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC, typical 0.6 C/W] | — |
| 封裝 | D2PAK (TO-263) surface mount | TO-220AB (through-hole) |
| 安裝類型 | Surface Mount | Through Hole |
| Technology | HEXFET, planar cell | HEXFET (IR MOSFET) |
| Total Gate Charge (Qg) | 120 nC (typical per Mouser listing) | 120 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| RoHS 狀態 | Compliant (PBF suffix indicates Pb-free) | — |
| Qualification | JEDEC standard | — |
| FET Type | — | P-Channel |
| Continuous Drain Current (ID) at TC | — | -74 A |
| Power Dissipation (PD) at TC | — | 200 W |
| On-Resistance RDS(on) max at VGS=-10V | — | 20 mΩ |
| 工作溫度範圍 | — | -55 °C to +175 °C (junction) |
| Pin Configuration | — | Gate - Drain - Source (left to right) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| MSL 等級 | — | 1 (not moisture-sensitive for TO-220) |