IRF520NPBF vs IRFZ44NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF520NPBF sa pamamagitan ng Infineon at IRFZ44NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF520NPBF IRFZ44NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series HEXFET —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V_DSS) 100 V —
Continuous Drain Current (I_D) at Tc 9.7 A —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current value] —
Gate-to-Source Voltage (V_GS) max ±20 V —
R_DS(on) max at V_GS=10V 200 mOhm —
Total Gate Charge (Q_g) 16.7 nC —
Power Dissipation (P_D) at Tc 48 W —
Hanay ng Temperature na Operasyon -55C to +175C —
Packhaging TO-220AB (through-hole) TO-220AB (3-pin + tab)
Uri ng Pagpapasok Through Hole Through Hole
Level ng MSL 1 (unlimited) —
Tindminan RoHS Compliant (Pb-free) Compliant
Lead-Free Finish Yes (PBF suffix) —
Technology HEXFET (vertical DMOS) HEXFET (Advanced Process)
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 49 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V — 17.5 mOhm
Total Gate Charge (Qg) — 42 nC
Power Dissipation (PD) at Tc=25C — 94 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 62 C/W
Temperature ng Junction na Operasyon — -55C to +175C
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS rating]

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