IRF7105TRPBF vs IRF7341GTRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7105TRPBF sa pamamagitan ng Infineon at IRF7341GTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7105TRPBF IRF7341GTRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Series IRF7105 (HEXFET Fifth Generation) —
Polarity / Configuration N-Channel + P-Channel, dual MOSFET in one package —
Drain-to-Source Voltage (Vds) 25 V —
Continuous Drain Current - N-channel (Id, N-ch) 3.5 A —
Continuous Drain Current - P-channel (Id, P-ch) 2.3 A —
Rds(on) Maximum 100 mOhm —
Technology HEXFET (IR MOSFET, fifth generation) IR HEXFET Planar MOSFET
Packhaging 8-SO (SOIC-8) 8-SO (SOIC-8)
Total Package Power Dissipation (Pd) 2 W —
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon [DATA_NEEDED: junction temperature range] -55 C to +175 C
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Packaging Form Tape & Reel (TR) —
Lead-Free / RoHS Status Pb-free (PBF suffix), RoHS compliant —
Bilang ng Pin 8 —
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 5.1 A
On-Resistance (RDS(on)) max — 50 mOhm at VGS=10V
Power Dissipation (PD) — 2.4 W
Maximum Junction Temperature — 175 C
Configuration — Dual N-Channel
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Tindminan RoHS — Compliant
Lead-Free — Yes (PBF suffix)

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