IRF7205PBF vs IRF7205TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF7205PBF sa pamamagitan ng Infineon at IRF7205TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF7205PBF | IRF7205TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -4.6 A | — |
| On-Resistance RDS(on) max at VGS=-10V | 70 mOhm | — |
| On-Resistance RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) | -1 V to -3 V (typical) | -1.0 V to -3.0 V |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Technology | IR MOSFET (HEXFET, planar cell) | IR HEXFET (4th generation) |
| Packhaging | SO-8 | SO-8 (8-SO) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | — |
| Power Dissipation (TA=25C) | [DATA_NEEDED: Pd at TA=25C] | — |
| Switching Frequency Optimization | Below 100 kHz | — |
| Qualification | JEDEC standard | — |
| Tindminan RoHS | Compliant (Pb-free per PBF suffix) | — |
| Generation | Fourth Generation HEXFET | — |
| FET Type | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25°C | — | -4.6 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=-10V | — | 70 mΩ |
| On-Resistance RDS(on) max @ VGS=-4.5V | — | 130 mΩ |
| Total Gate Charge Qg | — | 27 nC |
| Pwersang Pinahihigpit (TC=25°C) | — | 2.5 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +150 °C |
| RoHS / Lead-Free | — | Lead-Free (PBF suffix), RoHS compliant |
| Packaging | — | Tape & Reel (TR suffix) |