IRF7205PBF vs IRF7205TRPBF 比較
詳細並排比較 IRF7205PBF 由 Infineon 與 IRF7205TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7205PBF | IRF7205TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -4.6 A | — |
| On-Resistance RDS(on) max at VGS=-10V | 70 mOhm | — |
| On-Resistance RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) | -1 V to -3 V (typical) | -1.0 V to -3.0 V |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Technology | IR MOSFET (HEXFET, planar cell) | IR HEXFET (4th generation) |
| 封裝 | SO-8 | SO-8 (8-SO) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55 C to +150 C (junction) | — |
| Power Dissipation (TA=25C) | [DATA_NEEDED: Pd at TA=25C] | — |
| Switching Frequency Optimization | Below 100 kHz | — |
| Qualification | JEDEC standard | — |
| RoHS 狀態 | Compliant (Pb-free per PBF suffix) | — |
| Generation | Fourth Generation HEXFET | — |
| FET Type | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) at TA=25°C | — | -4.6 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=-10V | — | 70 mΩ |
| On-Resistance RDS(on) max @ VGS=-4.5V | — | 130 mΩ |
| Total Gate Charge Qg | — | 27 nC |
| 功率耗散 (TC=25°C) | — | 2.5 W |
| 工作接面溫度 | — | -55 °C to +150 °C |
| RoHS / Lead-Free | — | Lead-Free (PBF suffix), RoHS compliant |
| Packaging | — | Tape & Reel (TR suffix) |