IRF7389PBF vs IRF7854TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7389PBF sa pamamagitan ng Infineon at IRF7854TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF7389PBF IRF7854TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) — $0.48
Configuration N and P-Channel (complementary half-bridge) —
Drain-to-Source Voltage N-Ch (V_DSS) 30 V —
Drain-to-Source Voltage P-Ch (V_DSS) -30 V —
Continuous Drain Current N-Ch (I_D) 7.3 A —
Continuous Drain Current P-Ch (I_D) -5.3 A —
On-Resistance N-Ch R_DS(on) max 0.029 ohm at V_GS=10V —
On-Resistance P-Ch R_DS(on) max 0.058 ohm at V_GS=10V —
Total Gate Charge N-Ch (Q_g) typical 22 nC —
Total Gate Charge P-Ch (Q_g) typical 23 nC —
Power Dissipation (P_D) 2.5 W —
Technology Generation V HEXFET HEXFET (planar N-channel)
Packhaging SO-8 (SOIC-8) surface mount SO-8
Pinout Industry-standard complementary SO-8 —
Hanay ng Temperature na Operasyon [DATA_NEEDED: full operating temperature range] -55°C to +150°C (TJ)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant —
Lead-Free Yes —
Wala sa Halogen Yes —
Avalanche Rated Yes (fully avalanche rated) —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at Ta=25°C — 10 A
Power Dissipation (PD) at Ta=25°C — 2.5 W
On-Resistance RDS(on) max at VGS=10V — 13.4 mΩ
Gate-Source Threshold Voltage VGS(th) max — 4.9 V
Total Gate Charge Qg — 27 nC
Lead-Free / RoHS — Yes (PBF suffix, lead-free)
Qualification — JEDEC industrial, Normal level
Solder Process — Reflow and wave-solderable
Gate Drive Voltage (recommended) — 10 V

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