IRF7769L1TRPBF vs IRF7779L2TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF7769L1TRPBF sa pamamagitan ng Infineon at IRF7779L2TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF7769L1TRPBF IRF7769L1TRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRF7769L1TRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRF7769L1TRPBF ✓ Nakahanda
Infineon
IRF7779L2TRPBF IRF7779L2TRPBF - 150V 67A HEXFET N-Channel MOSFET | Infineon

IRF7779L2TRPBF - 150V 67A HEXFET N-Channel MOSFET | Infineon

IRF7779L2TRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF7769L1TRPBF IRF7779L2TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
VDS (Drain-Source Voltage) 100 V —
VGS (Gate-Source Voltage) ±20 V —
Continuous Drain Current (TA=25C) 20 A —
Continuous Drain Current (TC=25C) 124 A —
Pulsed Drain Kuru-kuryente 142 A —
Power Dissipation (TA=25C) 3.3 W —
Power Dissipation (TC=25C) 125 W —
RDS(on) max at VGS=10V 3.5 mOhm 11 mOhm
RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)] —
Total Gate Charge Qg 200 nC —
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Packhaging DirectFET Isometric L8 DirectFET Isometric L8
Package Profile 0.7 mm —
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C (TJ) —
Level ng MSL 1 —
Lead-Free Reflow 260C qualified —
Wala sa Halogen Yes —
RoHS Compliance Compliant —
Drain-to-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at Tc=25C — 67 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
RDS(on) typical at VGS=10V — 7.7 mOhm
Gate-to-Source Voltage (VGS) max — 20 V
Total Gate Charge (Qg) — 11 nC
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at Tc=25C — 125 W
Power Dissipation (PD) at TA=25C — 3.3 W
Temperature ng Junction na Operasyon — -55C to +175C
Profile Height — 0.7 mm
Tindminan RoHS — Compliant

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