IRF8736TRPBF vs IRF7832TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF8736TRPBF sa pamamagitan ng Infineon at IRF7832TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF8736TRPBF IRF7832TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology StrongIRFET / HEXFET HEXFET (trench MOSFET)
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A 20 A
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Packhaging SO-8 (8-SO, MS-012AA) 8-SO (SOIC-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55 C to +150 C (TJ)
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
Level ng MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Avalanche Rated Yes (fully characterized avalanche voltage) —
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF7832TRPBF
Drain-Source Voltage (VDS) — 30 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 4.0 mOhm
Gate-Source Voltage (VGS) max — +/- 20 V
Gate Threshold Voltage (VGS(th)) typical — 1.0 V to 2.5 V
Total Gate Charge (Qg) typical — 34 nC
Power Dissipation (PD) at TA=25C — 2.5 W
Tindminan RoHS — Compliant
Lead-Free — Yes

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