IRF8736TRPBF vs IRF7832TRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF8736TRPBF tarafından Infineon ve IRF7832TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF8736TRPBF | IRF7832TRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET / HEXFET | HEXFET (trench MOSFET) |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 18 A | 20 A |
| Power Dissipation (PD) Max at TA=25C | 2.5 W | — |
| Drain-Source On-Resistance (RDS(on)) Max | 4.8 mOhm at VGS = 10V | — |
| Gate Charge (Qg) Typical | 17 nC | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Paket | SO-8 (8-SO, MS-012AA) | 8-SO (SOIC-8) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -55C to +150C (junction) | -55 C to +150 C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free, RoHS compliant) | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (fully characterized avalanche voltage) | — |
| Configuration | Single | — |
| Packaging | Tape & Reel (TRPBF suffix) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7832TRPBF |
| Drain-Source Voltage (VDS) | — | 30 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) typical | — | 1.0 V to 2.5 V |
| Total Gate Charge (Qg) typical | — | 34 nC |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| RoHS Durumu | — | Compliant |
| Lead-Free | — | Yes |