IRFH5015TRPBF vs IRFH5300TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFH5015TRPBF sa pamamagitan ng Infineon at IRFH5300TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFH5015TRPBF | IRFH5300TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (StrongIRFET) |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 10 A | 40 A |
| Continuous Drain Current (ID) at TC=25C | 56 A | 100 A |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | 50 nC |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Packhaging | 8-PQFN (5x6) SuperSO8 | PQFN-8 (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| Temperature na Operasyon | -55C to +150C (TJ max) | — |
| Tindminan RoHS | Compliant | Compliant |
| Polarity | — | N-Channel |
| Pulsed Drain Current (IDM) | — | 336 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Power Dissition at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 250 W |
| Hanay ng Temperature na Operasyon | — | -55C to +150C |
| Gate Drive Level | — | Logic-level (5V optimized) |
| JEDEC Qualification | — | Yes |