IRFH5015TRPBF vs IRFH5300TRPBF 比較
詳細並排比較 IRFH5015TRPBF 由 Infineon 與 IRFH5300TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFH5015TRPBF | IRFH5300TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (StrongIRFET) |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 10 A | 40 A |
| Continuous Drain Current (ID) at TC=25C | 56 A | 100 A |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | 50 nC |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| 封裝 | 8-PQFN (5x6) SuperSO8 | PQFN-8 (5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| 工作溫度 | -55C to +150C (TJ max) | — |
| RoHS 狀態 | Compliant | Compliant |
| Polarity | — | N-Channel |
| Pulsed Drain Current (IDM) | — | 336 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Power Dissition at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 250 W |
| 工作溫度範圍 | — | -55C to +150C |
| Gate Drive Level | — | Logic-level (5V optimized) |
| JEDEC Qualification | — | Yes |