IRFH5015TRPBF vs IRFH5300TRPBF Comparison
Detailed side-by-side comparison of IRFH5015TRPBF by Infineon and IRFH5300TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5015TRPBF
IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon
IRFH5015TRPBF β ActiveInfineon
IRFH5300TRPBF
IRFH5300TRPBF - 30V N-Channel HEXFET MOSFET | Infineon
IRFH5300TRPBF β ActiveSpecification Comparison
| Parameter | IRFH5015TRPBF | IRFH5300TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.45 |
| FET Type | N-Channel | β |
| Technology | IR MOSFET (HEXFET) | HEXFET (StrongIRFET) |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 10 A | 40 A |
| Continuous Drain Current (ID) at TC=25C | 56 A | 100 A |
| On-Resistance (RDS(on)) max | 31 mOhm | β |
| Total Gate Charge (Qg) | 33 nC | 50 nC |
| Power Dissipation (TA=25C) | 3.6 W | β |
| Power Dissipation (TC=25C) | 156 W | β |
| Gate Drive Voltage (VGS recommended) | 10 V | β |
| Package | 8-PQFN (5x6) SuperSO8 | PQFN-8 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | β |
| Operating Temperature | -55C to +150C (TJ max) | β |
| RoHS Status | Compliant | Compliant |
| Polarity | β | N-Channel |
| Pulsed Drain Current (IDM) | β | 336 A |
| On-Resistance RDS(on) max at VGS=10V | β | 1.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Power Dissition at TA=25C | β | 3.6 W |
| Power Dissipation at TC=25C | β | 250 W |
| Operating Temperature Range | β | -55C to +150C |
| Gate Drive Level | β | Logic-level (5V optimized) |
| JEDEC Qualification | β | Yes |