IRFP2907PBF vs IRF150P220AKMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFP2907PBF sa pamamagitan ng Infineon at IRF150P220AKMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFP2907PBF IRF150P220AKMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP2907PBF IRF150P220AKMA1
Technology HEXFET Stripe Planar DMOS (N-Channel) StrongIRFET
Drain-to-Source Voltage (V_DSS) 75 V —
Continuous Drain Current (I_D) at T_C = 25 C 209 A —
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V —
Power Dissipation (P_D) at T_C = 25 C 470 W —
Total Gate Charge (Q_g) 410 nC —
Maximum Junction Operating Temperature +175 C —
Package / Mounting Type TO-247AC (Through Hole) —
Bilang ng Pin 3 (Gate, Drain, Source) —
RoHS Compliance Yes (Pb-free) —
Avalanche Rated Yes (repetitive avalanche rated) —
Body Diode Integral (no external anti-parallel diode required) —
Lead-Free Yes Yes
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID) at Tc=25C — 203 A
On-Resistance (RDS(on) max) at VGS=10V — 2.7 mOhm
Gate-Source Voltage (VGS max) — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (Pd) at Tc=25C — 556 W
Power Dissipation (Pd) at Ta=25C — 3.8 W
Hanay ng Temperature na Operasyon — -55C to +175C
Packhaging — TO-247-3 (PG-TO247-3)
Uri ng Pagpapasok — Through Hole
Terminal Finish — Tin (Sn)
JESD-609 Code — e3
Tindminan RoHS — Compliant

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