IRFR220NPBF vs IRFR220NTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR220NPBF sa pamamagitan ng Infineon at IRFR220NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR220NPBF IRFR220NTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25C 5 A —
Power Dissipation (PD) at TC=25C 43 W —
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V —
Uri ng Pagpapasok Surface Mount Surface Mount
Packhaging / Kaso TO-252AA (DPAK) —
Technology HEXFET (Planar) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] [DATA_NEEDED: total gate charge Qg]
Hanay ng Temperature na Operasyon -55C to +150C (junction) -55C to +150C (junction)
Lead-Free / RoHS Yes, lead-free (PBF suffix) —
Avalanche Energy Rated Yes (per datasheet characterization) —
Bilang ng Pin 3 (Gate, Drain, Source) plus tab —
Level ng MSL 1 (per JEDEC J-STD-020) 1
Polarity — N-Channel
Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 200 V
Continuous Drain Current (Id) at Tc=25C — 5 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 0.800 ohm (max)
Gate-to-Drain Charge (Qgd) — Low (per datasheet - HEXFET design)
Power Dissipation (Pd) at Tc=25C — 43 W
Packhaging — TO-252AA (DPAK), 2 Leads + Tab, SC-63
Tindminan RoHS — Compliant (Pb-free PBF suffix)
Packaging — Tape & Reel (Left orientation - TRLPBF)
Avalanche Rated — Yes (HEXFET ruggedized design)
Technology Family — HEXFET, Planar, Generation 3

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita