IRFR5410TRPBF vs IRFR120NTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5410TRPBF sa pamamagitan ng Infineon at IRFR120NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRFR5410TRPBF - -100V P-Channel HEXFET MOSFET, 13A, DPAK | Infineon
IRFR5410TRPBF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRFR5410TRPBF | IRFR120NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Packhaging | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C (TJ) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | HEXFET (IR MOSFET fifth generation) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | Lead-Free, RoHS Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | — | 48 W |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 210 milliohms at VGS=10V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2 V to 4 V typical |
| Total Gate Charge (Qg) typical | — | 16.7 nC |
| Gate-to-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss] |
| Hanay ng Temperature ng Junction na Operasyon | — | -55C to +175C |
| Channel Type | — | N-Channel Enhancement Mode |
| Avalanche Energy Rating (EAS) | — | [DATA_NEEDED: EAS] |
| Thermal Resistance Junction-to-Case (RthJC) max | — | [DATA_NEEDED: RthJC] |