IRFR9120NTRPBF vs IRF7319TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR9120NTRPBF sa pamamagitan ng Infineon at IRF7319TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR9120NTRPBF | IRF7319TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC=25C | -6.6 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) max at VGS=-10V | 480 milliohm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | 18 nC (typical) | — |
| Continuous Power Dissipation (PD) at TC=25C | 40 W | — |
| Hanay ng Temperature ng Junction na Operasyon | -55C to +175C | — |
| Thermal Resistance Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Packhaging | TO-252AA (DPAK), surface mount | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited floor life) | — |
| Lead Finish / Plating | Pb-free (PBF suffix), Matte Tin | — |
| Technology | HEXFET fifth-generation IR MOSFET | IR MOSFET / Fifth Generation HEXFET |
| Tindminan RoHS | Compliant | — |
| Moisture Sensitivity | MSL1 per JEDEC J-STD-020 | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |
| Packaging | — | Tape & Reel (TR suffix) |
| Configuration | — | N-Channel + P-Channel (complementary half-bridge) |