IRFS3306PBF vs IRFB3306PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFS3306PBF sa pamamagitan ng Infineon at IRFB3306PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFS3306PBF IRFB3306PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET) IR HEXFET (MOSFET)
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 120 A (package limited) —
Continuous Drain Current (ID, silicon limited) 160 A —
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
On-Resistance RDS(on) max @ VGS=10V 4.2 mOhm —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
Total Gate Charge (Qg) typ 85 nC [DATA_NEEDED: total gate charge Qg]
Gate-to-Drain Charge (Qgd) typ [DATA_NEEDED: Qgd nominal value] —
Power Dissipation (Pd) max @ Tc=25C 230 W —
Temperature ng Junction na Operasyon -55C to +175C -55°C to +175°C
Packhaging D2PAK (TO-263AB) surface mount TO-220AB (through-hole)
Uri ng Pagpapasok Surface Mount Through Hole
Level ng MSL 1 (per JEDEC J-STD-020) —
Lead-Free / RoHS PbF (lead-free), RoHS compliant —
Drain-Source Voltage (Vdss) — 60 V
Continuous Drain Current (Id) at Tc=25°C — 120 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max — ±20 V
Rds(on) max @ Vgs=10V — 4.2 mΩ
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical value]
Gate-Drain Charge (Qgd) typ — 26 nC (nominal)
Power Dissipation (Pd) at Tc=25°C — 230 W
RoHS / Lead-Free (PbF) — Yes (PbF suffix indicates lead-free, RoHS compliant)
Avalanche Rated — Yes
Body Diode — Intrinsic (avalanche-rated)

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