IRL540NPBF vs IRLZ44NPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRL540NPBF sa pamamagitan ng Infineon at IRLZ44NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRL540NPBF | IRLZ44NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number | IRL540NPBF | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (Planar DMOS) | HEXFET (advanced process) |
| Drain-to-Source Voltage (VDS) | 100 V | 55 V |
| Gate-to-Source Voltage (VGS) max | +/-16 V | — |
| Continuous Drain Current (ID) at Tc=25C | 36 A | — |
| Pulsed Drain Current (IDM) | 130 A (pulsed) | 160 A |
| On-Resistance RDS(on) max | 44 mOhm at VGS=5V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2 V (logic level) | 1.0 V to 2.0 V (typ 1.5 V) |
| Total Gate Charge (Qg) | 49.3 nC | 32 nC |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | -55 °C to +175 °C |
| Packhaging | TO-220AB (through-hole) | TO-220AB (through-hole, 3 leads) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25°C | — | 47 A |
| Gate-to-Source Voltage (VGS) Max | — | ±16 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 22 mΩ max at VGS=5V, ID=25A |
| Power Dissipation (PD) at TC=25°C | — | 110 W |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.4 °C/W |
| Logic-Level Gate Drive | — | Yes (fully enhanced at VGS=5V) |