IRLB3813PBF vs IRFR4615TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLB3813PBF sa pamamagitan ng Infineon at IRFR4615TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRLB3813PBF IRFR4615TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology StrongIRFET (HEXFET) IR MOSFET (N-Channel Enhancement Mode)
Drain-Source Voltage (VDS) 30 V 150 V
Continuous Drain Current (ID) at Tc=25C 260 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V 1.95 mOhm 42 mOhm
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) 57 nC (typical, per Mouser snippet) 26 nC
Power Dissipation (PD) at Tc=25C 230 W —
Temperature ng Junction na Operasyon -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) —
Packhaging TO-220AB (through-hole) TO-252AA (DPAK)
Uri ng Pagpapasok Through Hole Surface Mount
Gate Drive Level Logic-level (fully enhanced at 4.5 V VGS) —
Avalanche Rated Yes (per datasheet: fully characterised avalanche voltage and current) —
Qualification Standard JEDEC (industrial market) —
Tindminan RoHS Compliant (Pb-free suffix PBF) —
Lead-Free Yes —
Continuous Drain Current (ID) at TC=25C — 33 A
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Power Dissipation (PD) at TC=25C — 144 W
Avalanche Energy (EAS) — 109 mJ
Hanay ng Temperature na Operasyon — -55C to +175C
Lead-Free / RoHS — Yes (PBF suffix indicates Pb-free)
Energia ng Isang Pagpupuslit ng Pagbubwis — 109 mJ

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita