IRLR9343TRPBF vs IRFR5505TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLR9343TRPBF sa pamamagitan ng Infineon at IRFR5505TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLR9343TRPBF | IRFR5505TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLR9343TRPBF | — |
| FET Type | P-Channel MOSFET | — |
| Technology | IR HEXFET | IR MOSFET (HEXFET 5th generation) |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current rating] | -72 A |
| On-Resistance RDS(on) max at VGS=-10V | 105 mOhm | 110 mOhm |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: max VGS rating] | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 31 nC (typical) | 21.3 nC |
| Power Dissipation (PD) at Tc=25C | 79 W | — |
| Packhaging | PG-TO252-3 (DPAK) Surface Mount | TO-252AA (DPAK), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj min/max operating range] | — |
| Tindminan RoHS | Compliant | Compliant (PBF suffix) |
| Lead-Free | Yes | Yes (PBF suffix) |
| Level ng MSL | 1 | — |
| Optimized Application | Class-D audio amplifier output stages | — |
| Polarity | P-Channel | P-Channel |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) max | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -18 A |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Rise Time (tr) | — | [DATA_NEEDED: tr] |
| Fall Time (tf) | — | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | — | 57 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | — | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 50 C/W (typical, DPAK on 1 oz copper) |