ISC009N06NM6ATMA1 vs ISZ072N06NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC009N06NM6ATMA1 sa pamamagitan ng Infineon at ISZ072N06NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | ISC009N06NM6ATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 60 V | OptiMOS 6 60V |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta=25C | 40 A | — |
| Pulsed Drain Current (IDM) at Tc=25C | 344 A | — |
| Power Dissition (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 221 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| RDS(on) max @ VGS=10 V | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg typical value] | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | -55C to +175C ( Tj max 175C ) |
| Packhaging | PG-TDSON-8 (3.3 x 3.3 mm) | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (per JEDEC J-STD-020) | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 status] | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 57 A |
| Continuous Drain Current (ID, Ta) | — | 12.7 A |
| RDS(on) max @ VGS=10V | — | 7.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V (typ) |
| Pwersang Pinahihigpit (TC=25°C) | — | 50 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Technology | — | OptiMOS 6 trench MOSFET |