ISC011N03L5SATMA1 vs ISC009N06LM5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC011N03L5SATMA1 sa pamamagitan ng Infineon at ISC009N06LM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC011N03L5SATMA1 ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 ✓ Nakahanda
Infineon
ISC009N06LM5ATMA1 ISC009N06LM5ATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

ISC009N06LM5ATMA1 - 60V N-Channel OptiMOS 5 MOSFET | Infineon

ISC009N06LM5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC011N03L5SATMA1 ISC009N06LM5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 / StrongIRFET 30 V OptiMOS 5
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V 60 V
Continuous Drain Current (ID) @ Ta=25C 37 A —
Continuous Drain Current (ID) @ Tc=25C 100 A —
Power Dissipation (PD) @ Ta=25C 2.5 W —
Power Dissipation (PD) @ Tc=25C 96 W —
Packhaging PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) PG-TSON-8-3 (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55 C to +175 C (TJ) —
Technology OptiMOS 5 trench MOSFET OptiMOS 5 60V N-channel trench MOSFET
Gate Drive Logic-level compatible —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Continuous Drain Current (ID) at Ta — 41 A
Continuous Drain Current (ID) at Tc — 348 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS maximum rating]
Gate-Source Threshold (VGS(th)) — [DATA_NEEDED: VGS threshold typical]
On-Resistance RDS(on) max at VGS=10V — 0.9 mOhm
Power Dissipation at Ta (PD) — 3 W
Power Dissipation at Tc (PD) — 214 W
Hanay ng Temperature na Operasyon — -55 C to +175 C

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