ISC011N03L5SATMA1 vs ISC009N06LM5ATMA1 比較
詳細並排比較 ISC011N03L5SATMA1 由 Infineon 與 ISC009N06LM5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC011N03L5SATMA1 | ISC009N06LM5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 / StrongIRFET 30 V | OptiMOS 5 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | — |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | — |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | — |
| Power Dissipation (PD) @ Tc=25C | 96 W | — |
| 封裝 | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TSON-8-3 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 C to +175 C (TJ) | — |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 60V N-channel trench MOSFET |
| Gate Drive | Logic-level compatible | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID) at Ta | — | 41 A |
| Continuous Drain Current (ID) at Tc | — | 348 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: VGS threshold typical] |
| On-Resistance RDS(on) max at VGS=10V | — | 0.9 mOhm |
| Power Dissipation at Ta (PD) | — | 3 W |
| Power Dissipation at Tc (PD) | — | 214 W |
| 工作溫度範圍 | — | -55 C to +175 C |