ISC011N06LM5ATMA1 vs IQE008N03LM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC011N06LM5ATMA1 sa pamamagitan ng Infineon at IQE008N03LM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
ISC011N06LM5ATMA1 ✓ NakahandaInfineon
IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC011N06LM5ATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5, Source-Down |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta | 37 A | — |
| Continuous Drain Current (ID) at Tc | 288 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 188 W | — |
| RDS(on) max at VGS=10V | 1.15 mOhm | — |
| Packhaging | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55°C to +150°C (typical MOSFET junction rating) |
| Tindminan RoHS | Compliant | Compliant (per LCSC listing) |
| Level ng MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | 2 V (at 250 µA per LCSC snippet) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 27 A |
| Continuous Drain Current (ID) at TC=25°C | — | 253 A |
| On-Resistance RDS(on) Typical | — | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 89 W |
| Gate-Source Voltage (VGS) Max | — | ±20 V (typical MOSFET rating) |