ISC015N04NM5ATMA1 vs BSC0906NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC015N04NM5ATMA1 sa pamamagitan ng Infineon at BSC0906NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC015N04NM5ATMA1 ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N04NM5ATMA1 ✓ Nakahanda
Infineon
BSC0906NSATMA1 BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon

BSC0906NSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC015N04NM5ATMA1 BSC0906NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series OptiMOS 5 40V Normal Level —
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench MOSFET) OptiMOS
Drain-Source Voltage (VDS) 40 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.4 V (typ) [DATA_NEEDED: VGS(th) typ/min/max]
R_DS(on) max 1.5 mOhm @ VGS=10 V, ID=50 A —
Continuous Drain Current (ID) at Ta=25C 33 A —
Continuous Drain Current (ID) at Tc=25C 206 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM rating] —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 115 W —
Hanay ng Temperature na Operasyon -55 C to +175 C (junction, per OptiMOS 5) -55C to +150C (junction, typical)
Packhaging / Kaso PG-TDSON-8 FL (SuperSO8 5x6 mm) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 8 8
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per Infineon SuperSO8 family) —
Drive Level Normal Level (VGS(th) ~3.4 V) —
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 18 A
Continuous Drain Current (ID) at Tc — 63 A
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 30 W
Packhaging — PG-TDSON-8-6 (SuperSO8, 5x6 mm)
RDS(on) max (typical reference) — [DATA_NEEDED: RDS(on) max @ VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg @ VGS=10V]

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