ISC015N04NM5ATMA1 vs ISC011N03L5SATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC015N04NM5ATMA1 sa pamamagitan ng Infineon at ISC011N03L5SATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
ISC015N04NM5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | ISC015N04NM5ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Normal Level | OptiMOS 5 / StrongIRFET 30 V |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | — |
| Continuous Drain Current (ID) at Ta=25C | 33 A | — |
| Continuous Drain Current (ID) at Tc=25C | 206 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 115 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C (junction, per OptiMOS 5) | — |
| Packhaging / Kaso | PG-TDSON-8 FL (SuperSO8 5x6 mm) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per Infineon SuperSO8 family) | 1 (per JEDEC J-STD-020) |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Packhaging | — | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Temperature na Operasyon | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |