ISC015N04NM5ATMA1 vs ISC011N03L5SATMA1 比較
詳細並排比較 ISC015N04NM5ATMA1 由 Infineon 與 ISC011N03L5SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC015N04NM5ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Normal Level | OptiMOS 5 / StrongIRFET 30 V |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| R_DS(on) max | 1.5 mOhm @ VGS=10 V, ID=50 A | — |
| Continuous Drain Current (ID) at Ta=25C | 33 A | — |
| Continuous Drain Current (ID) at Tc=25C | 206 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 115 W | — |
| 工作溫度範圍 | -55 C to +175 C (junction, per OptiMOS 5) | — |
| 封裝 / 外殼 | PG-TDSON-8 FL (SuperSO8 5x6 mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 8 | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per Infineon SuperSO8 family) | 1 (per JEDEC J-STD-020) |
| Drive Level | Normal Level (VGS(th) ~3.4 V) | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| 封裝 | — | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| 工作溫度 | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |