ISC015N06NM5ATMA1 vs BSZ068N06NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng ISC015N06NM5ATMA1 sa pamamagitan ng Infineon at BSZ068N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
ISC015N06NM5ATMA1 ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 - 60V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon

ISC015N06NM5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro ISC015N06NM5ATMA1 BSZ068N06NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Polarity / Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TA=25C 33 A —
Pulsed Drain Current (IDM) at TC=25C 259 A —
On-Resistance RDS(on) typical at VGS=10V 1.5 mOhm —
Total Power Dissipation (TA) 3 W —
Total Power Dissipation (TC) 188 W —
Packhaging PG-TDSON-8 (PQFN 5x6) Drain-Down PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55 C to +175 C -55 °C to +150 °C
Technology Trench MOSFET (OptiMOS 5) OptiMOS 5 (trench-gate)
Tindminan RoHS Compliant —
MSL (Moisture Sensitivity Level) 1 —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 40 A
Continuous Drain Current (ID, Ta) — [DATA_NEEDED: ID at Ta]
On-Resistance RDS(on) max — 6.8 mΩ @ VGS=10 V
Power Dissipation (Ta) — 2.1 W
Power Dissipation (Tc) — 46 W
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typ/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg typ]
Level ng MSL — MSL1
RoHS / Halogen-Free — RoHS compliant, halogen-free

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita