ISC046N13NM6ATMA1 vs ISC015N04NM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC046N13NM6ATMA1 sa pamamagitan ng Infineon at ISC015N04NM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC015N04NM5ATMA1 - 40V 1.5mOhm OptiMOS 5 N-MOSFET | Infineon
ISC015N04NM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC046N13NM6ATMA1 | ISC015N04NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 135 V | 40 V |
| Continuous Drain Current (ID) at TA | 17 A | — |
| Continuous Drain Current (ID) at TC | 142 A | — |
| Power Dissipation (PD) at TA | 3 W | — |
| Power Dissipation (PD) at TC | 211 W | — |
| Packhaging / Kaso | PG-TDSON-8 | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | -55 C to +175 C (junction, per OptiMOS 5) |
| Technology | OptiMOS 6 trench MOSFET | OptiMOS 5 (trench MOSFET) |
| Gate Drive (recommended) | 10 V (typical) | — |
| Tindminan RoHS | Compliant | Compliant |
| Packaging | Tape & Reel | — |
| Series | — | OptiMOS 5 40V Normal Level |
| FET Type | — | N-Channel |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | 3.4 V (typ) |
| R_DS(on) max | — | 1.5 mOhm @ VGS=10 V, ID=50 A |
| Continuous Drain Current (ID) at Ta=25C | — | 33 A |
| Continuous Drain Current (ID) at Tc=25C | — | 206 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM rating] |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 115 W |
| Bilang ng Pin | — | 8 |
| Level ng MSL | — | 1 (per Infineon SuperSO8 family) |
| Drive Level | — | Normal Level (VGS(th) ~3.4 V) |