K3LK4L40DM-BGCT vs MT40A512M8RH-075E:B Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K3LK4L40DM-BGCT sa pamamagitan ng Samsung Electronics at MT40A512M8RH-075E:B sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ NakahandaMicron Technology
MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
MT40A512M8RH-075E:B ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K3LK4L40DM-BGCT | MT40A512M8RH-075E:B |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DRAM (SDRAM component) | DDR4 SDRAM |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 4 Gbit |
| Organization (x-width) | [DATA_NEEDED: Organization] | — |
| Rate ng Data | [DATA_NEEDED: Data Rate] | 2666 MT/s (DDR4-2666) |
| Supply Voltage Class | [DATA_NEEDED: Supply Voltage] | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | — |
| Package Type | BGA (per -BGC ordering-code suffix) | — |
| Package Ball Count | [DATA_NEEDED: Ball Count] | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range (standard grade)] |
| Refresh Rate | [DATA_NEEDED: Refresh Interval] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Lead Free | [DATA_NEEDED: Lead-Free Status] | — |
| Level ng MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Packaging | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] | — |
| Organisasyon | — | 512M x 8 |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| Uri ng Interface | — | Parallel |
| I/O Structure | — | 1.2V pseudo open-drain |
| Tingnan ang Volte | — | On-die internal adjustable VREFDQ generation |
| Packhaging | — | 78-FBGA (9 x 10.5 mm), TFBGA |
| Refresh | — | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| Speed Grade Suffix | — | -075E |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |